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| Research on Silicon in the Cuticle of Wheat Stem |
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| DOI：10.11981/j.issn.1000-6842.2011.03.1 |
| Key Words:cuticle of wheat stem; silicon; SEM-EDX; IR |
| Author Name | Affiliation | | 云 娜1,2 | 1.广东轻工职业技术学院，广东广州，510300；2.华南理工大学制浆造纸工程国家重点实验室，广东广州，510640 | | 邱玉桂2 | 1.广东轻工职业技术学院，广东广州，510300；2.华南理工大学制浆造纸工程国家重点实验室，广东广州，510640 |
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| Abstract: |
| The distribution and chemical state of silicon in the cuticle of wheat stem were researched by scanning electron microscopy- energy dispersive X-ray analysis (SEM-EDX) and infrared absorption spectroscopy (IR). The results showed that there were two sorts of outer surfaces of wheat stem, the major kind was with parallel stripes, consisting mainly of the silicon element. The chemical states of silicon were Si—O—C and Si—H. The other kind had many granules and stomas on it. The density of silicon element in granules and in the circle of the stoma (i.e. the stomatic wall) was very high. The silicon had other chemical states of Si—O—Si and Si—C, besides Si—O—C and Si—H. |
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